Method of forming patterns

ABSTRACT

A substrate having a target material layer is provided. A first hard mask layer, a second hard mask layer, and a photoresist layer are formed on the target material layer. The photoresist layer is transferred into first patterns on the second hard mask layer. Regions of the second hard mask layer not protected by the first patterns are etched away, thereby forming second patterns. The first patterns are trimmed to form trimmed features. A conformal spacer material layer is deposited on the trimmed features, the second patterns, and the first hard mask. The spacer material layer is etched to form first spacers on sidewalls of the trimmed features, and second spacers on sidewalls of the second patterns. The trimmed features are removed. Regions of the second patterns not protected by the first spacers are removed, thereby forming patterns with a reduced, fine pitch.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.15/060,609, filed Mar. 4, 2016, now U.S. Pat. No. 10,073,342, issuedSep. 11, 2018, the disclosure of which is hereby incorporated herein inits entirety by this reference.

TECHNICAL FIELD

The present invention relates generally to the manufacture ofsemiconductor devices. More specifically, this invention relates to amethod of forming patterns with reduced, fine pitches.

BACKGROUND

With the prosperous growth of electrical products consumption, thecurrent trend of consumers' demand, including increased portability,computing power, memory capacity and energy efficiency, is for thedimension of such products to almost always be toward small size anddelicacy design.

The continual reduction in feature sizes results in greater demands onthe techniques used to form the critical features in the integratedcircuits. For example, lithography is commonly used to pattern thesefeatures. Because lithography is typically accomplished by projectinglight or radiation onto a surface, the ultimate resolution of aparticular lithographic technique depends upon factors such as opticsand light or radiation wavelength.

In many applications it is advantageous to have features such as linesand spaces to be as small as possible. Smaller line widths or periodstranslate into higher performance and/or higher density circuits. Hence,the microelectronics industry is on a continual quest to reduce theminimum resolution in photolithography systems and thereby reduce theline widths or periods on patterned substrates.

There exists a need for a method of fabricating sub-lithographic sizedline and space patterns that utilizes conventional lithography systemsto fabricate the sub-lithographic sized line and space patterns with afeature size that is less than the lithography limit of the lithographysystem.

BRIEF SUMMARY

The present disclosure is directed to provide an improved method offorming patterns that is capable of overcoming the limitation of thepresent optical lithography technique and increasing the patternresolution of the semiconductor manufacturing process.

In one aspect of the disclosure, a method of forming patterns isdisclosed. A substrate having thereon a target material layer isprovided. A first hard mask layer, a second hard mask layer, and aphotoresist layer are formed on the target material layer. Thephotoresist layer is transferred into first patterns on the second hardmask layer. Regions of the second hard mask layer that are not protectedby the first patterns are etched away, thereby forming second patternsthat substantially conform to and align with the first patterns. Aresist trimming process is performed to trim only the first patterns onthe second patterns to thereby form trimmed features. A conformal spacermaterial layer is deposited on the trimmed features, the secondpatterns, and on the first hard mask. The spacer material layer isetched to form a plurality of first spacers on the sidewalls of thetrimmed features, and a plurality of second spacers on the sidewalls ofthe second patterns. The trimmed features are removed. An anisotropicdry etching process is performed to etch regions of the second patternsthat are not protected by the first spacers, thereby forming a pluralityof patterns with a reduced, fine pitch P₂ that is about one-quarter ofthe pitch P₁.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the embodiments, and are incorporated in and constitutea part of this specification. The drawings illustrate some of theembodiments and, together with the description, serve to explain theirprinciples. In the drawings:

FIG. 1 through FIG. 10 are diagrams illustrating an exemplary method forforming patterns having a reduced, fine pitch according to oneembodiment of the invention.

It should be noted that all the figures are diagrammatic. Relativedimensions and proportions of parts of the drawings are exaggerated orreduced in size, for the sake of clarity and convenience. The samereference numerals are generally used to refer to corresponding orsimilar features in modified and different embodiments.

DETAILED DESCRIPTION

In the following detailed description of the invention, reference ismade to the accompanying drawings, which form a part hereof, and inwhich is shown, by way of illustration, specific embodiments in whichthe invention may be practiced. These embodiments are described insufficient detail to enable those skilled in the art to practice theinvention. Other embodiments may be utilized and structural changes maybe made without departing from the scope of the present invention.

The following detailed description is, therefore, not to be taken in alimiting sense, and the scope of the present invention is defined onlyby the appended claims, along with the full scope of equivalents towhich such claims are entitled.

One or more implementations of the present invention will now bedescribed with reference to the accompanying drawings, wherein likereference numerals are used to refer to like elements throughout, andwherein the illustrated structures are not necessarily drawn to scale.

The term “substrate” as used herein includes any structure having anexposed surface onto which a layer is deposited according to the presentinvention, for example, to form the integrated circuit (“IC”) structure.The term “substrate” is understood to include semiconductor wafers. Theterm “substrate” is also used to refer to semiconductor structuresduring processing, and may include other layers that have beenfabricated thereupon. The term “substrate” includes doped and undopedsemiconductors, epitaxial semiconductor layers supported by a basesemiconductor or insulator, as well as other semiconductor structureswell known to one skilled in the art.

The term “horizontal” as used herein is defined as a plane parallel tothe conventional major plane or surface of the substrate, regardless ofits orientation. The term “vertical” refers to a direction perpendicularto the horizontal plane as just defined. Terms, such as “on,” “above,”and “under,” are defined with respect to the horizontal plane.

The term “critical dimension” or “CD” is typically the smallestgeometrical feature, such as the width of an interconnect line, contact,or trench, that is formed during IC manufacturing using a giventechnology.

The term “pitch doubling” or “pitch multiplication” refers generally toa method for extending the capabilities of photolithographic techniquesbeyond their minimum pitch. The concept of pitch can be used to describethe sizes of the critical circuit features, such as conductive lines.Pitch is defined as the distance between identical points in twoneighboring features.

These features are typically defined by spaces between adjacentfeatures, which spaces are typically filled by a material, such as aninsulator. As a result, pitch can be viewed as the sum of the width of afeature and of the width of the space on one side of the featureseparating that feature from a neighboring feature. Conventionally,“multiplication” of pitch by a certain factor actually involves reducingthe pitch by that factor. The conventional terminology is retainedherein.

The present invention pertains to a pitch multiplication methodinvolving only one photolithographic step and a resist trimming processto define the critical dimension, followed by a self-aligned spacerformation to achieve pitch multiplication.

FIG. 1 through FIG. 10 are diagrams illustrating an exemplary method forforming patterns having a reduced, fine pitch according to oneembodiment of the invention. As shown in FIG. 1, a substrate 10 isprovided. According to one embodiment, the substrate 10 may be asemiconductor substrate such as a silicon substrate, a silicon germanium(SiGe) substrate, a silicon-on-insulator (SOI) substrate, an epitaxialsilicon substrate, or the like. A target material layer 11 is disposedon a main surface of the substrate 10. According to one embodiment, thetarget material layer 11 may be a dielectric layer, a polysilicon layeror a metal layer, but is not limited thereto. It is one object of theinvention to form fine-pitch patterns in the target material layer 11.

According to one embodiment, a first hard mask layer 12 is disposed onthe target material layer 11. A second hard mask layer 13 is disposed onthe first hard mask layer 12. The first hard mask layer 12 may comprisepolysilicon, silicon oxide, silicon nitride, or carbon-containingmaterials, but is not limited thereto. In some embodiments, the firsthard mask layer 12 may comprise metals. The second hard mask layer 13may comprise a resist material having high etching selectivity withrespect to the first hard mask layer 12.

For example, the second hard mask layer 13 may include, but not limitedto, a spin-on polymer material commercially available from Shin-EtsuChemical Company, Ltd. (6-1 Ohtemachi 2-chome, Chiyoda-ku, Tokyo100-0004, Japan), such as the ODL series, i.e., ODL301. The second hardmask layer 13 may provide additional etch resistance during subsequentpattern transfer in an etching process.

According to one embodiment, a photoresist layer 14 is disposed on thesecond hard mask layer 13. For example, the photoresist layer 14 maycomprise a radiation sensitive silicon-containing resist such as I-lineresist, but is not limited thereto. The photoresist layer 14 maycomprise a variety of photoresist chemicals suitable for lithographicapplications. The photoresist layer 14 is selected to have photochemicalreactions in response to electromagnetic radiation emitted from apredetermined light source. The photoresist layer 14 may be a chemicallyamplified, positive or negative tone, or organic-based photoresist.According to one embodiment, the photoresist layer 14 has high etchingselectivity with respect to the second hard mask layer 13.

As shown in FIG. 2, a lithographic process is carried out to form firstpatterns 14 a, such as line-shaped patterns on the second hard masklayer 13. The aforesaid lithographic process typically involves exposureto UV/DUV (ultraviolet/deep ultraviolet) light, followed by subsequentbaking, inducing a photochemical reaction which changes the solubilityof the exposed regions of the photoresist layer 14. Thereafter, anappropriate developer, typically an aqueous base solution, is used toselectively remove the photoresist layer 14 in the exposed regions (forpositive-tone resists).

At this point, the first patterns 14 a have a first pitch P₁, which isthe combination of the line width L₁ of each first pattern 14 a and thespace S₁ between two adjacent first patterns 14 a. According to oneembodiment, L₁: S₁=5:3.

As shown in FIG. 3, an anisotropic dry etching process is then performedto etch away the regions of the second hard mask layer 13 that are notprotected by the first patterns 14 a, thereby forming second patterns 13a that substantially conform to and align with the first patterns 14 a.At this point, the underlying first hard mask layer 12 is substantiallyintact due to high etching selectivity to the second hard mask layer 13.

As shown in FIG. 4, a resist trimming process is performed to trim onlythe first patterns 14 a on the second patterns 13 a to thereby formtrimmed features 14 b. The resist trimming step may be a plasma etchingstep. The first patterns 14 a are exposed to a plasma etchant to trim orreduce the dimensions of features patterned on the second patterns 13 a.The plasma etchant may comprise a variety of plasma etch chemistries,such as, O₂, HBr/O₂, Cl₂/O₂, N₂/He/O₂, or N₂/O₂, but is not limitedthereto. The trimmed features 14 b have a lateral dimension or criticaldimension (CD).

As shown in FIG. 5, a spacer material layer 16 is conformally depositedon the top surfaces and sidewalls of the trimmed features 14 b, on thetop surfaces and sidewalls of the second patterns 13 a, and on theexposed top surface of the first hard mask layer 12. According to oneembodiment, the spacer material layer 16 may be a silicon oxide layerand may be deposited by using a chemical vapor deposition (CVD) oratomic layer deposition (ALD) method. However, it is understood thatother spacer materials may be employed.

As shown in FIG. 6, the spacer material layer 16 is anisotropicallyetched to form a plurality of spacers 16 a on the sidewalls of thetrimmed features 14 b, and a plurality of spacers 16 b on the sidewallsof the second patterns 13 a in a self-aligned fashion.

Subsequently, as shown in FIG. 7, the trimmed features 14 b areselectively removed, leaving the spacers 16 a, the spacers 16 b, and thesecond patterns 13 a intact. The removal of the trimmed features 14 bmay involve the use of a conventional wet cleaning method (e.g., dilutedHF solution) or conventional photoresist removing methods, but is notlimited thereto. After removing the trimmed features 14 b, a gap 18 a isformed between two adjacent spacers 16 a on each of the second patterns13 a. The dimension of the gap 18 a is substantially equal to thecritical dimension of the removed trimmed features 14 b.

As shown in FIG. 8, using the spacers 16 a on the second patterns 13 aas a mask, an anisotropic dry etching process is performed to etch theregions of the second patterns 13 a that are not protected by thespacers 16 a, thereby forming a plurality of patterns 160 with areduced, fine pitch P₂ that is about one-quarter of the pitch P₁. Theremaining second patterns 13 b are situated directly under the spacers16 a, respectively. According to one embodiment, the plurality ofpatterns 160 may be dense line-shaped patterns with equal lines andspaces.

Subsequently, as shown in FIG. 9, using the plurality of patterns 160with the reduced, fine pitch P₂ as a hard mask, an anisotropic dryetching process is then performed to transfer the patterns 160 into thefirst hard mask layer 12, thereby forming hard mask patterns 12 a havingthe reduced, fine pitch P₂.

Finally, as shown in FIG. 10, using the hard mask patterns 12 a with thereduced, fine pitch P₂ as an etching hard mask, an anisotropic dryetching process is then performed to transfer the hard mask patterns 12a into the underlying target material layer 11, thereby forming targetpatterns 11 a having the reduced, fine pitch P₂.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A method of patterning a target material,comprising: forming a first pattern and a second pattern over a hardmask material on a target material, the first pattern overlying thesecond pattern; laterally removing a portion of the first patternwithout laterally removing a portion of the second pattern to formtrimmed features on the second pattern; forming first spacers onsidewalls of the trimmed features and second spacers on sidewalls of thesecond pattern; removing the trimmed features to expose the secondpattern; removing exposed portions of the second pattern between thefirst spacers and the second spacers to form a spacer pattern; removingexposed portions of the hard mask material between the spacer pattern toform a hard mask pattern; and removing exposed portions of the targetmaterial between the hard mask pattern to form a target materialpattern.
 2. The method of claim 1, wherein forming a first pattern and asecond pattern over a hard mask material comprises forming the firstpattern and the second pattern in materials selectively etchablerelative to one another.
 3. The method of claim 1, wherein forming afirst pattern and a second pattern over a hard mask material comprisesforming the first pattern and the second pattern comprisingequally-spaced lines.
 4. The method of claim 1, wherein forming a firstpattern and a second pattern over a hard mask material comprises formingthe first pattern in a photoresist material and forming the secondpattern in a spin-on polymer material.
 5. The method of claim 1, whereinforming a first pattern and a second pattern over a hard mask materialcomprises aligning the first pattern over the second pattern.
 6. Themethod of claim 1, wherein forming a first pattern and a second patternover a hard mask material comprises forming the first pattern and thesecond pattern at a first pitch.
 7. The method of claim 6, whereinremoving exposed portions of the target material to form a targetmaterial pattern comprises forming the target material pattern at asecond pitch, the second pitch equal to about one-quarter of the firstpitch.
 8. A method of patterning a target material, comprising: forminga first photoresist pattern over a first hard mask material on a targetmaterial, the first photoresist pattern comprising a pitch; forming asecond hard mask pattern on the first hard mask material, the secondhard mask pattern comprising a second hard mask material; laterallyremoving a portion of the first photoresist pattern without laterallyremoving a portion of the second hard mask pattern to form trimmedphotoresist features on the second hard mask pattern; forming a spacermaterial over the trimmed photoresist features, the second hard maskpattern, and the first hard mask material; removing a portion of thespacer material to form first spacers on sidewalls of the trimmedphotoresist features and second spacers on sidewalls of the second hardmask pattern; removing the trimmed photoresist features; removing thesecond hard mask material exposed between the first spacers and thesecond spacers to form a spacer material pattern; and removing the firsthard mask material exposed between the spacer material pattern and theunderlying target material to form a target material pattern comprisinga pitch about one quarter of the pitch of the first photoresist pattern.9. The method of claim 8, wherein forming a first photoresist patternover a first hard mask material comprises forming the first photoresistpattern over a polysilicon material, a silicon oxide material, a siliconnitride material, a carbon-containing material, or a metal material. 10.The method of claim 8, wherein forming a first photoresist patterncomprises removing a portion of a first photoresist material overlyingthe second hard mask material.
 11. The method of claim 8, whereinforming a second hard mask pattern on the first hard mask materialcomprises using the first photoresist pattern as a mask to form thesecond hard mask pattern.
 12. The method of claim 8, wherein forming asecond hard mask pattern on the first hard mask material comprisesforming the second hard mask pattern comprising a second photoresistmaterial.
 13. The method of claim 8, wherein removing the second hardmask material exposed between the first spacers and the second spacersto form a spacer material pattern comprises forming the spacer materialpattern comprising the first spacers and the second spacers.
 14. Themethod of claim 8, wherein removing the first hard mask material exposedbetween the spacer material pattern and the underlying target materialto form a target material pattern comprises forming the target materialpattern in a dielectric material, a polysilicon material, or a metalmaterial.
 15. A method of patterning a target material, comprising:forming a first pattern over a first hard mask material on a targetmaterial; forming a second pattern over the first hard mask material,the second pattern aligned with the first pattern and comprising asecond hard mask material; laterally removing a portion of the firstpattern without laterally removing a portion of the second pattern toform trimmed features on the second pattern; forming a spacer materialover the trimmed features, the second pattern, and the first hard maskmaterial; removing a portion of the spacer material to form firstspacers on sidewalls of the trimmed features and second spacers onsidewalls of the second pattern; removing the trimmed features; removinga portion of the second pattern exposed between the first spacers andthe second spacers to form a spacer material pattern; removing the firsthard mask material exposed between the spacer material pattern to form ahard mask pattern; and removing the target material exposed between thehard mask pattern to form a pattern of lines in the target material. 16.The method of claim 15, wherein forming a first pattern over a firsthard mask material on a target material comprises forming a pattern oflines over the first hard mask material.
 17. The method of claim 16,wherein forming a first pattern over a first hard mask material on atarget material comprises forming each of the lines of the first patternat a first pitch.
 18. The method of claim 17, wherein removing the firsthard mask material exposed between the spacer material pattern to form ahard mask pattern comprises forming lines of the hard mask pattern at asecond pitch equal to about one-quarter of the first pitch.
 19. Themethod of claim 15, wherein forming a spacer material over the trimmedfeatures, the second pattern, and the first hard mask material comprisesconformally forming a silicon oxide material over the trimmed features,the second pattern, and the first hard mask material.
 20. The method ofclaim 15, wherein removing the target material exposed between the hardmask pattern to form a pattern of lines in the target material comprisesforming a pattern of equally-spaced lines in the target material.